1/6 preliminary data aug 2000 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STB45NF06 n-channel 60v - 0.022 w - 38a d2pak stripfet? power mosfet (1) i sd 38a, di/dt 300a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.022 w n exceptional dv/dt capability description this power mosfet is the latest development of stmicroelectronics unique single feature size ? strip-based process. the resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n high-efficiency dc-dc converters n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STB45NF06 60v <0.028 w 38a symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 38 a i d drain current (continuos) at t c = 100c 26 a i dm ( l ) drain current (pulsed) 152 a p tot total dissipation at t c = 25c 80 w derating factor 0.53 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c d2pak 1 3 internal schematic diagram
STB45NF06 2/6 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.87 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 38 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 135 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10 v, i d = 19 a 0.022 0.028 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 45 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =19 a 24 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1730 pf c oss output capacitance 215 pf c rss reverse transfer capacitance 63 pf
3/6 STB45NF06 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30v, i d = 19a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 100 ns q g total gate charge v dd = 48v, i d = 38a, v gs = 10v 43 58 nc q gs gate-source charge 9 nc q gd gate-drain charge 15 nc symbol parameter test conditions min. typ. max. unit t d(off) turn-off-delay time v dd = 30v, i d = 19a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 50 ns t f fall time 20 ns t d(off) off-voltage rise time vclamp =48v, i d =38a r g =4.7 w, v gs = 10v 45 ns t f fall time (see test circuit, figure 5) 42 ns t c cross-over time 60 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 38 a i sdm (1) source-drain current (pulsed) 152 a v sd (2) forward on voltage i sd = 38a, v gs = 0 1.5 v t rr reverse recovery time i sd = 38a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 95 ns q rr reverse recovery charge 260 nc i rrm reverse recovery current 5.5 a
STB45NF06 4/6 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/6 STB45NF06 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.4 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 det ail "a" det ail "a" a2 p011p6/e to-263 (d 2 pak) mechanical data
STB45NF06 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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